power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:07/21/16 89 MG12150D-BA1MM 1200v 150a igbt module MG12150D-BA1MM features applications ? ultra low loss ? high ruggedness ? high short circuit capability ? positive temperature coeffcient ? with fast free-wheeling diodes absolute maximum ratings (t c = 25c, unless otherwise specifed) symbol parameters test conditions values unit igbt v ces collector - emitter voltage 1200 v v ges gate - emitter voltage 20 v i c dc collector current t c =25c 210 a t c =80c 150 a i cpuls pulsed collector current t c =25c, t p =1ms 420 a t c =80c, t p =1ms 300 p tot power dissipation per igbt 110 0 w t j junction temperature range -40 to +150 c t stg storage temperature range -40 to +125 c v isol insulation test voltage ac, t=1min 3000 v diode v rrm repetitive reverse voltage 1200 v i f(av) average forward current t c =25c 180 a t c =80c 120 a i f(rms) rms forward current 180 a i fsm non-repetitive surge forward current t j =45c, t=10ms, sine 860 a t j =45c, t=8.3ms, sine 900 module characteristics (t c = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit r thjc junction-to-case thermal resistance per igbt 0.11 k/w r thjcd per inverse diode 0.27 k/w torque module-to-sink recommended (m6) 3 5 nm torque module electrodes recommended (m6) 2.5 5 nm weight 285 g ? inverter ? converter ? welder ? smps and ups ? induction heating life support note: not intended for use in life support or life saving applications the products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ? r ohs agency approvals 1 agency agency file number e71639
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:07/21/16 90 MG12150D-BA1MM 1200v 150a igbt module symbol parameters test conditions min typ max unit igbt v ge(th) gate - emitter threshold voltage v ce =v ge , i c =6ma 5.0 6.2 7. 0 v v ce(sat) collector - emitter saturation voltage i c =150a, v ge =15v, t j =25c 1. 8 v i c =150a, v ge =15v, t j =125c 2.0 v i ces collector leakage current v ce =1200v, v ge =0v, t j =25c 0.4 1. 0 ma v ce =1200v, v ge =0v, t j =125c 4.0 ma i ges gate leakage current v ce =0v,v ge =20v -200 200 na q ge gate charge v cc =600v, i c =150a , v ge =15v 1550 nc c ies input capacitance v ce =25v, v ge =0v, f =1mhz 11 nf c oes output capacitance 0.8 c res reverse transfer capacitance 0.52 t d(on) turn - on delay time v cc =600v i c =150a r g =7.5 v ge =15v inductive load t j =25c 150 ns t j =125c 160 ns t r rise time t j =25c 65 ns t j =125c 65 ns t d(off) turn - off delay time t j =25c 440 ns t j =125c 500 ns t f fall time t j =25c 55 ns t j =125c 70 ns e on turn - on energy t j =25c 14.9 mj t j =125c 20.6 mj e off turn - off energy t j =25c 9.8 mj t j =125c 15.6 mj diode v f forward voltage i f =150a , v ge =0v, t j =25c 2.0 2.48 v i f =150a , v ge =0v, t j =125c 1. 7 2.20 v t rr reverse recovery time i f =150a , v r =800v di f /dt=-1000a/s t j =125c 240 ns i rrm max. reverse recovery current 85 a q rr reverse recovery charge 10.5 c electrical and thermal specifcations (t c = 25c, unless otherwise specifed) 2
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:07/21/16 91 MG12150D-BA1MM 1200v 150a igbt module figure 1: typical output characteristics i c (a) v ce(sat ) ?v? t j =125c t j =25c 300 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 3.5 figure 2: typical transfer characteristics e on e of f ( mj ) 120 100 80 60 40 20 0 50 150 i c ?a? v cc =600v r g =7.55ohm v ge =15v t j =125c e on e of f 350 300 250 200 100 0 figure 3: switching energy vs. collector current 50 60 40 30 20 10 0 05 10 15 20 25 30 e on e of f ( mj ) e on e of f r g ?ohm ? 35 v cc =600v i c =150 a v ge =15v t j =125c figure 4: switching energy vs. gate resistor t ( ns ) 1000 100 0 40 120 i c ?a? v cc =600v r g =7.5oh m v ge =15v t j =125c t d ( off ) 280 240 200 160 80 0 1 t d ( on ) t r t f figure 5: switching times vs. collector current figure 6: switching times vs. gate resistor 0 1 05 10 15 20 25 30 r g ?ohm ? 35 v cc =600v i c =150 a v ge =15v t j =125c t ( ns ) 100 0 100 t d ( off ) t d ( on ) t f t r v ge ?v? 14 12 10 8 6 4 2 0 0 50 i c (a) 100 150 200 250 300 v ce =20v t j =125c t j =25c 3
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:07/21/16 92 MG12150D-BA1MM 1200v 150a igbt module figure 7: gate charge characteristics v ge (v) q g ?c ? 0 20 25 10 15 5 0.2 0 0.4 0.6 0.8 1.0 1.2 1. 4 v cc =600v i c =150 a t j =25c c ( nf ) v ce ?v? v ge =0v f=1mhz c ies c oe s c res 0.1 1 10 0 51 01 52 0 25 30 35 100 figure 8: typical capacitances vs. v ce i c p uls ( a ) t j =150c t c =25c v ge =15v 500 400 300 200 100 0 200 600 v ce ?v? 1400 1200 1000 800 400 0 figure 9: reverse biased safe operating area 200 0 240 0 160 0 1200 800 400 0 0 200 400 600 800 1000 1200 v ce ?v? 140 0 i csc ( a ) t j =150c t c =25c v ge =15v t sc 0 10s figure 10: short circuit safe operating area figure 11: rated current vs. t c t c case te mperature(c) i c ( a ) t j =150c v ge 1 15v 0 125 1501 75 50 75 100 250 300 50 100 150 200 0 25 t j =25c t j =125c v f ?v? 0 0 50 150 200 300 250 0.5 100 1. 01 .5 2.0 2.5 3 3.5 i f ( a ) figure 12: diode forward characteristics 4
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:07/21/16 93 MG12150D-BA1MM 1200v 150a igbt module z thjc ( k/w ) rectangular pulse duration (seconds) duty 0.5 0.2 0.1 0.05 single puls e 10 -4 10 -4 10 -3 10 -2 10 -1 1 10 -3 10 -2 10 -1 1 figure 13: transient thermal impedance of igbt duty 0.5 0.2 0.1 0.05 single puls e 1 1 10 -1 10 -1 10 -2 10 -2 10 -3 10 -3 10 -4 10 -4 z thjc ( k/w ) rectangular pulse duration (seconds) figure 14: transient thermal impedance of diode 5 dimensions-package d circuit diagram 5 7 6 4 3 2 1 3-m6 2.8x0.5
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:07/21/16 94 MG12150D-BA1MM 1200v 150a igbt module packing options part number marking weight packing mode m.o.q MG12150D-BA1MM MG12150D-BA1MM 285g bulk pack 60 part numbering system part marking system product type m: power module module type g: igbt circuit type wafer type package type mg1 21 50 d - b a1 mm voltage rating current rating assembly site 12: 1200v 150: 150a 2x(igbt+fwd) MG12150D-BA1MM lot number 5 7 6 4 3 2 1 6
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